L. D. Hu#, L. Li#, K. C. Chang*（张冠张）, X. N. Lin, P. Huang, S. D. Zhang, “Ultrasensitive Freestanding and Mechanically Durable Artificial Synapse with Attojoule Power Based on Na-Salt Doped Polymer for Biocompatible Neuromorphic Interface”, Advanced Functional Materials, 2021, 31, 2106015. (Front pieces)
 L. Li, L. D. Hu, K. Liu, K. C. Chang*（张冠张）, R. Zhang, X. Lin, S. D. Zhang, P. Huang, H. J. Liu, and T. P. Kuo, “Bifunctional homologous alkali-metal artificial synapse with regenerative ability and mechanism imitation of voltage-gated ion channels”, Material Horizons, 2021, 8, 3072-3081. (Back Cover)
 Z. H. Peng, F. C. Wu, L. Jiang, G. S. Cao, B. Jiang, G. Cheng, S. W. Ke, K. C. Chang*（张冠张）, L. Li, C. Ye, “HfO2-Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri-Layer HfO2/BiFeO3/HfO2 Design”, Advanced Functional Materials, 2021, 2107131.
 K. C. Chang（张冠张）, K. Liu, L. D. Hu, L. Li, X. Lin, S. D. Zhang, R. Zhang, H. J. Liu and T. P. Kuo, “Supercritical Ammoniation-Enabled Interfacial Polarization for Function-Mode Transformation and Overall Optimization of Thin-Film Transistors, ACS Applied Materials and Interfaces, 2021, 13, 40053–40061.
 K. C. Chang（张冠张）, Q. Zhou, K. Liu, L. Li, R. Zhang, H. J. Liu, T. Z. Kuo, “Eco-Friendly, Highly Efficient Ethanol-Assisted Supercritical Preparation of an Ultrathin ZnO Nanotube”, ACS Sustainable Chemistry and Engineering, 2021, 9(46), 15478–15483.
 K. C. Chang（张冠张）, K. Liu, L. D. Hu, L. Li, X. Lin, S. D. Zhang, R. Zhang, H. J. Liu and T. P. Kuo, “Exploration of Physicochemical Mechanism for Negative Bias Temperature Instability in GaN-HEMTs by Extracting Activation Energy of Dislocations”, Advanced Materials Interfaces, 2022, 9(24), 2200871.
 F. Zheng, L. Li, K. C. Chang*（张冠张）, “Self-Alignment Embedded Thin-Film Transistor with High Transparency and Optimized Performance”, Advanced Materials Technologies, 2022, 13, 2200879.
 K. C. Chang（张冠张）, T. J. Dai, L. Li, X. N. Lin, S. D. Zhang, Y. C. Lai, H. J. Liu and Y. E. Syu, “The observation of Gaussian distribution and origination identification of deep defects in AlGaN/GaN MIS-HEMT”, Applied Physics Letters, 2022, 120(17), 172107.
 L. Li, T. J. Dai, K. Liu, K. C. Chang*（张冠张）, R. Zhang, X. Lin, H. J. Liu, Y. C. Lai and T. P. Kuo, “Achieving complementary resistive switching and multi-bit storage goals by modulating the dual-ion reaction through supercritical fluid-assisted ammoniation”, Nanoscale, 2021, 13, 14035–14040. (Front Cover Inside)
 K. C. Chang（张冠张）, T. J. Dai, L. Li, X. N. Lin, S. D. Zhang, Y. C. Lai, H. J. Liu and Y. E. Syu, “Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory”, Nanoscale, 2020, 12(43), 22070-22074. (Back Cover Inside)
 L. Li, K. C. Chang*（张冠张）, R. Zhang, X. Lin, Y. C. Lai and T. P. Kuo, “Variable-temperature activation energy extraction to clarify the physical and chemical mechanisms of the resistive switching process”, Nanoscale, 2020,12, 15721-15724.
 K. C. Chang（张冠张）, L. D. Hu, K. Qi, L. Li, X. Lin, S. D. Zhang, Z. W. Wang, Y. C. Lai, H. J. Liu and T. P. Kuo, “Low-temperature supercritical dehydroxylation for achieving an ultra-low subthreshold swing of thin-film transistors”, Nanoscale, 2021,13(11), 5700-5705. (Back Cover)
 K. Qi#, L. Li#, K. C. Chang*（张冠张）, X. N. Lin, H. J. Liu, Y. C. Lai, H. T. Zheng, G. Y. Huang, and T. P. Kuo, “A supercritical removal method: the rapid elimination of impurities in polymethyl-methacrylate at near room temperature and a mechanism investigation of insulating property improvements”, Journal of Materials Chemistry C, 2020, 8(44), 15664-15668.
 Z. L. Xin, Y. Tan, T. Chen, E. Iranmanesh, L. Li, K. C. Chang*（张冠张）, S. D. Zhang, C. Liu and H. Zhou*, “Visible-light-stimulated synaptic InGaZnO phototransistors enabled by wavelength-tunable perovskite quantum dots”, Nanoscale Advances, 2021, 3(17), 5046-5052.
 L. Li, K. C. Chang*（张冠张）, C. Ye*, X. Lin, R. Zhang, Z. Xu, W. Xiong, Y. Zhou and T. P. Kuo, “An Indirect Way to Achieve Comprehensive Performance Improvement of Resistive Memory: When Hafnium Meets ITO in Electrode”, Nanoscale, 2020, 12(5), 3267-3272.
 C. Ye, Z. Xu, K. C. Chang*（张冠张）, L. Li, X. N. Lin, R. Zhang, Y. Zhou, W. Xiong, T. P. Kuo, “Hafnium nanocrystals observed in a HfTiO compound film bring about excellent performance of flexible selectors in memory integration”, Nanoscale, 2019,11(43), 20792-20796.
 L. Li, K. C. Chang*（张冠张）, X. Lin, R. Zhang, J. H. Lou, “Insulating Property Improvement of Polyimide in Devices by Low-Temperature Supercritical Fluids”, Advanced Electronic Materials, 2019, 5(12), 1900580.
 L. D. Hu, H. J. Lou*, W. T. Li, K. C. Chang*（张冠张）and X. N. Lin*, “Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma Structure”, IEEE Transactions on Electron Devices,2021, 68(1), 399-404.
 B. W. Chen, T. C. Chang, K. C. Chang*（张冠张）, Y. J. Hung, S. P. Huang, H. M. Chen, P. Y. Liao, Y. H. Lin, H. C. Huang, H. C. Chiang, C. I. Yang, Y. Z. Zheng, A. K. Chu, H. W. Li, C. H. Tsai, H. H. Lu, T. J. Wang, T. C. Chang, “Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors”, ACS Applied Materials & Interfaces, 2017, 9(13), 11942-11949.
 K. C. Chang（张冠张）, R. Zhang, T. C. Chang, T. M. Tsai, T. J. Chu, H. L. Chen, C. C. Shih, C. H. Pan, Y. T. Su, P. J. Wu, S. M. Sze, “High performance, excellent reliability multifunctional graphene oxide doped memristor achieved by self-protective compliance current structure”, In 2014 IEEE International Electron Devices Meeting (IEDM), 33-34, 2014. (国际顶级会议)