Recent Journal Publications:
1. N. Lv#,L. Lu#, Z. Wang, H. Wang, D. Zhang, M. Wong, M. Wang, “Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistors,” IEEE Trans. Electron Devices, vol. 67, no. 7, pp. 3001–3004, Jul. 2020.
2. X. Zhou#,L. Lu#, Jin Wei, Yang Liu, K. Wang*, M. Wong, J. K. O. Sin, and H.-S. Kwok,, “Extracting the Critical Breakdown Electrical Field of Amorphous Indium-Gallium-Zinc-Oxide from the Avalanche Breakdown of n-Indium-Gallium-Zinc-Oxide/p+-Nickel-Oxide Heterojunction Diode,” IEEE Electron Device Lett., vol. 41, no. 7, pp. 1–1, 2020.
3. H. Peng, B. Chang, H. Fu, H. Yang, Y. Zhang, X. Zhou,L. Lu*, S. Zhang*, “Top-Gate Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors With Magnesium Metallized Source/Drain Regions,”IEEE Trans. Electron Devices, vol. 64, no. 7, pp. 1619–1624, 2020.
4. S. Wang, R. Shi, J. Li,L. Lu, Z. Xia, H. S. Kwok, M. Wong*, “Resilience of Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor against Hydrogen-Induced Degradation,”IEEE Electron Device Lett., DOI: 10.1109/LED.2020.2983789, 2020.
5. X. Zhou#,L. Lu#, K. Wang*, M. Wong, J. K. O. Sin, and H.-S. Kwok, “Low-Temperature-Processed Power Schottky Diode Based on Amorphous Indium-Tin-Zinc-Oxide/Indium-Gallium-Zinc-Oxide Bilayer,”IEEE Trans. Electron Devices, vol. 66, no. 11, pp. 4759–4763, Nov. 2019.
6.L. Lu#*, Z. Feng#, S. Wang, J. Li, Z. Xia, H. Kwok, and M. Wong, “Fluorination-Enabled Monolithic Integration of Enhancement- and Depletion-Mode Indium-Gallium-Zinc Oxide TFT,”IEEE Electron Device Lett., vol. 39, no. 5, pp. 692–695, 2018.
7.L. Lu*, Z. Xia, J. Li, Z. Feng, S. Wang, H. Kwok, and M. Wong, “A Comparative Study on Fluorination and Oxidation of Indium-Gallium-Zinc Oxide Thin-Film Transistors,”IEEE Electron Device Lett., vol. 39, no. 2, pp. 196–199, 2018.
8. Z. Xia,L. Lu, J. Li, H. Kwok, and M. Wong*, “A Bottom-Gate Metal-Oxide Thin-Film Transistor with Self-Aligned Source/Drain Regions,”IEEE Trans. Electron Devices, vol. 65, no. 7, pp. 2820–2826, 2018.
9. Y. Yang, D. Zhang*, M. Wang,L. Lu, M. Wong, “Suppressed Degradation of Elevated-Metal Metal-Oxide Thin-Film Transistors Under Bipolar Gate Pulse Stress,”IEEE Electron Device Lett., vol. 39, no. 5, pp. 707–710, 2018.
10. E. Chan*, D. Lin,L. Lu, D. Zhang, S. Guo, Y. Zhang, K. Chau, M. Wong*, “Realization and Characterization of a Bulk-Type All-Silicon High Pressure Sensor,”J.Microelectromechanical Syst., vol. 27, no. 2, pp. 231–238, 2018.
11. J. Li,L. Lu, H. S. Kwok, and M. Wong*, “Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor with Self-Aligned Definition of the Active Island,”IEEE Electron Device Lett., vol. 39, no. 1, pp. 35–38, 2018.
RecentConference Publications:
1. Z. Xia,L. Lu, J. Li, H. Kwok, and M. Wong, “Self-Aligned Elevated-Metal Metal-Oxide Thin-Film Transistors for Displays and Flexible Electronics,”65th IEEEInt. Electron Device Meet. (IEDM), San Francisco, pp. 170–173,Dec. 2019.(国际顶级微电子学会议)
2.L. Lu, J. Li, H. Kwok, and M. Wong, “High-Performance and Reliable Elevated-Metal Metal-Oxide Thin-Film Transistor for High-Resolution Displays,”62nd IEEEInt. Electron Device Meet. (IEDM), San Francisco, pp. 802–805,Dec. 2016.(国际顶级微电子学会议)
3. Y. Zhang, Z. Xia, J. Li, Y. Shao, S. Wang,L. Lu*(邀请报告), S. Zhang, H. S. Kwok, M. Wong, “Systematic Defect Manipulation in Metal Oxide Semiconductors towards High-Performance Thin-Film Transistors,”4thElectron Devices Technology and Manufacturing Conference (EDTM), Penang, pp. 1–4, Mar. 2020.
4. S. Wang,L. Lu, J. Li, et al., “Carrier concentration reduction by fluorine doping in p-type SnO thin film,”SID Symp. Dig. Tech. Pap., vol. 50, no. 1, pp. 1251–1254, Jun. 2019.(最佳论文奖)
5. H. Peng, B. Chang, H. Fu, H. Yang, Y. Zhang, X. Zhou,L. Lu*, S. Zhang, “Self-Aligned Top-Gate Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors with Source/Drain Regions Formed by Argon-Plasma Enhanced Aluminum Reaction Method,”Postgraduate Workshop on Display Research, Hsinchu, Aug. 2019. (最佳海报奖)
6.L. Lu (邀请报告), Z. Xia, J. Li, S. Zhang, H. S. Kwok, and M. Wong, “Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor with Annealing-Induced Source/Drain Regions,”Int. Meet. Inf. Disp., Gyeongju, YCL, Aug. 2019. (明日之星奖)
7. Z. Xia,L. Lu*, J. Li, et al., “The Use of Fluorination to Enhance the Performance and the Reliability of Elevated-Metal Metal-Oxide Thin-Film Transistors,”SID Symp. Dig. Tech. Pap., Los Angeles, vol. 49, no. 1, pp. 1235–1238, May 2018.(国际顶级信息显示技术会议)
8. E. Chan, D. Lin,L. Lu, et al., “Trench-Isolated Bulk-Type Pressure Sensor on Silicon-on-Insulator for High-Temperature and High-Pressure Downhole Applications,”Hilton Head Workshop:A Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head Island (Carolina), pp. 198–201, Jun. 2018.(国际顶级传感器会议)
Recent Patents:
1.陆磊,王文,郭海成,“METAL OXIDE THIN FILM TRANSISTOR WITH CHANNEL , SOURCE AND DRAIN REGIONS RESPECTIVELY CAPPED WITH COVERS OF DIFFERENT GAS PERMEABILITY”,美国专利10,032,924 B2,授权,2014年3月31日。
2.陆磊,王文,郭海成,“METAL OXIDE THIN FILM TRANSISTOR WITH SOURCE AND DRAIN REGIONS DOPED AT ROOM TEMPERATURE”,美国专利9,960,281 B2,授权,2015年2月9日。
3.陆磊,王文,郭海成,“一种薄膜晶体管及制造方法和显示器面板”,中国发明专利201610964470.9,授权,2016年10月28日。
4.陆磊,王文,郭海成,“一种电路结构及制作方法和显示器面板”,中国发明专利201610964428.7,授权,2016年10月28日。
5.陆磊,王文,郭海成,“一种薄膜晶体管及制造方法和显示器面板”,中国发明专利申请201610967204.1,授权,2016年10月28日。
6.陆磊,王文,郭海成,“一种显示器面板及制造方法”,中国发明专利201610967201.8,授权,2016年10月28日。
7.陆磊,王文,郭海成,“一种薄膜晶体管及制造方法和显示器面板”,中国发明专利201610967203.7,授权,2016年10月28日。
8.陆磊,王文,郭海成,“一种薄膜晶体管和显示器面板”,中国实用新型专利ZL 2016 2 1191789.3,授权,2016年10月28日。
9.陆磊,夏之荷,李佳鹏,王文,郭海成,“Vertical Metal-Oxide Thin-Film Transistor with Multiple-Junction Channel and Method of Fabricating the Same”,美国专利申请15/581,322,2017年4月28日。
10.陆磊,孙梽博,夏之荷,施闰霄,王文,郭海成,“液晶显示面板及其制作方法以及显示设备”,中国发明专利申请201910388622.9,2019年5月10日。
11.陆磊,夏之荷,李佳鹏,王文,郭海成,“显示面板及其制作方法以及显示设备”,中国发明专利申请201910388640.7,2019年5月10日。
12. 姜毅斌,董首成,陆磊,谭兆霆,邓青云,“Shadow Mask and Method of Fabricating The Same”,美国专利申请63/101,831,2019年5月15日。
13.陆磊,王文,郭海成,周贤达,王凯,“Metal-Oxide Schottky Diode and Fabrication Method Therefor”,美国专利申请62/920,919,2019年5月23日。
14. 王思思,王文,李佳鹏,夏之荷,陆磊,郭海成,“Metal-Oxide Schottky Diode and Fabrication Method Therefor”,美国专利申请63/102,358,2020年6月11日。