Lin Xinnan: His research direction is semiconductor devices. He is the leader of the National 973 Class A project, one of the first batch of Outstanding youth in Basic research of Shenzhen, and A Class B talent of Shenzhen Overseas High-level Peacock Program.
He graduated from Peking University in 1997 and worked as an assistant engineer in the Institute of Microelectronics. In 1999, he was sent to Hong Kong University of Science and Technology for further study. In 2007, he received his PhD in microelectronics from Hong Kong University of Science and Technology and returned to Shenzhen Graduate School of Peking University as a lecturer. In 2010, he was promoted to associate professor.
He has published more than 130 Sci/Ei papers, of which more than 20 have been published in top journals in the field of international electronic devices represented by IEEE TED and EDL. He has been invited to give lectures at international conferences and has been invited to write 2 monograph chapters. Dozens of invention patents have been applied for and have been authorized. The article proposing bimetallic gate junctionless devices was included in the top 1% of ESI's global engineering engineering list in 2015. He has won the first place in the university category of the 2009 Shenzhen Innovation Award, the second place in the individual ranking, and the outstanding contribution award for innovation in the second "Jinbo Award" of Guangdong Province. He has won the second prize of outstanding class teacher of Peking University, the outstanding teacher of Shenzhen Graduate School of Peking University, and the honor of leading the class to win the excellent study style class of Peking University.
In terms of domestic academic part-time work: he served as vice chairman and secretary general of the Electrical Energy Conservation Committee of the China Electrotechnical Society, director of the Power Electronics Committee, member of the Electronic Components Committee of the China Power Supply Society, and deputy secretary-general of the Shenzhen Electric Energy Conservation Research Association. He was awarded the "2010-2014 Advanced Society Worker" of China Electrotechnical Society.
In terms of international academic part-time work: founded the IEEE Electronic Devices and Integrated Circuits Shenzhen Branch and served as the first chairman, and is a reviewer of many well-known journals in the industry such as IEEE TED, EDL, Materials today and so on. He has long served as a member of the IEEE EDSSC (Electronic Devices and Integrated Circuits Conference) Technical Committee and co-chair of the IEEE EDSSC 2017 Technical Committee.
In the direction of semiconductor devices, the specific research content of the research group in recent years is as follows:
1. New simulation methods, tools and device SPICE models for EDA
a) Structure and model of cutting-edge nanoic devices: FinFET, TFET(tunneling field-effect tube), junction free devices;
b) New memory device structure and model: PCRAM(phase change memory), RRAM (resistive memory);
c) New reliability and storage characteristics simulation methods, tools and modeling methods.
2. Power electronic devices
a) The physics, structure and process of GaN(gallium nitride) and SiC(silicon carbide) devices with wide band gap materials;
b) Silicon based IGBT device structure and technology.
