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ZHANG Guanzhang

Title:Assistant Professor
Tel:0755-26033013
Email:kcchang@pkusz.edu.cn
Office:A314
Lab Web:
Title Assistant Professor Tel 0755-26033013
Email kcchang@pkusz.edu.cn Office A314
Lab Web

Assistant Professor (PhD Supervisor), School of Information Engineering, Shenzhen Graduate School, Peking University

Postdoctoral fellow, Department of Materials and Optoelectronics, National Sun Yat-sen University

PhD, Department of Materials and Optoelectronics, National Sun Yat-sen University. (Supervisor: Shi Min, Academician, Us National Academy of Engineering and Chinese Academy of Engineering)

Bachelor degree in Chemistry, Tokai University

In recent years, I have devoted myself to the research and development of various new electronic devices and their physical mechanism, and pioneered the use of supercritical fluid technology to repair materials and improve device performance. The main contents of current research include:

1. Resistive storage devices (device and circuit integration): research includes material selection, device structure optimization design, theoretical model. The performance and reliability of the implemented resistance memory reach the world's most advanced level. At the same time, it also continues to deepen cooperation with the industry and jointly promote the progress and development of variable-resistant memory in more fields.

2.Supercritical fluid technology (micro-nano electronic device modification) : Supercritical flow is the fourth phase state of material between liquid and gas. With the advantage of interdisciplinary background, a series of in-depth studies on supercritical fluid and electronic devices and materials are carried out. Successfully repaired the internal defects of RRAM, TFT, GaN, HEMT, CNT and other devices (especially after the preparation of the device is still effective) and modified the properties of the material. The research theme is not only committed to innovation, but also to green environmental protection and sustainable development, and a number of technological breakthroughs in application.

3. Neuromorphic devices (device and application integration): Research and development of a variety of transistor-based devices with synaptic characteristics, in-depth discussion of various types of plasticity of neural morphology, while developing advanced neuromorphic algorithms, in the combination of software and hardware, at the lowest power consumption and cost to achieve the simulation of human brain neural networks.

4. Advanced display (micro display chip and integration): Develop the preparation process and optimization conditions of high-performance thin film transistors, and improve the performance of thin film transistors in many ways to match their applications in the field of advanced display.

5. GaN device: The research includes the physics, structure and process of wide bandgazing materials GaN (gallium nitride) and SiC (silicon carbide) devices.

6. Bioelectronic integration (biocompatible device): Research and development of electronic devices based on various types of biomaterials and biocompatible materials, and applied in the fields of bionics, energy, sensing and so on.

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